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SI9956DY Datasheet(PDF) 4 Page - NXP Semiconductors |
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SI9956DY Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 13 page Philips Semiconductors Si9956DY N-channel enhancement mode field-effect transistor Product data Rev. 01 — 16 July 2001 4 of 13 9397 750 08414 © Philips Electronics N.V. 2001. All rights reserved. 7. Thermal characteristics 7.1 Transient thermal impedance Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; tp ≤ 10 s; minimum footprint; Figure 4 62.5 K/W Tamb =25 °C Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration. 03af75 10-1 1 10 102 10-4 10-3 10-2 10-1 1 10 tp (s) Zth(j-amb) (K/W) single pulse δ = 0.5 0.2 0.1 0.05 0.02 tp tp T P t T δ = |
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