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N04L1630C2BT2 Datasheet(PDF) 6 Page - AMI SEMICONDUCTOR

No. de pieza N04L1630C2BT2
Descripción Electrónicos  4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 횞 16 bit POWER SAVER TECHNOLOGY TM
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Fabricante Electrónico  AMI [AMI SEMICONDUCTOR]
Página de inicio  http://www.amis.com
Logo AMI - AMI SEMICONDUCTOR

N04L1630C2BT2 Datasheet(HTML) 6 Page - AMI SEMICONDUCTOR

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(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
N04L1630C2B
Advance Information
AMI Semiconductor, Inc.
Timing Test Conditions
Item
Input Pulse Level
0.1VCC to 0.9 VCC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5 VCC
Output Load
CL = 30pF
Operating Temperature
-40 to +85 oC
Timing
Item
Symbol
-55
-70
Units
Min.
Max.
Min.
Max.
Read Cycle Time
tRC
55
70
ns
Address Access Time
tAA
55
70
ns
Page Mode Address Access Time
tAAP
30
35
ns
Chip Enable to Valid Output
tCO
55
70
ns
Output Enable to Valid Output
tOE
30
35
ns
Byte Select to Valid Output
tBE
55
70
ns
Chip Enable to Low-Z output
tLZ
10
10
ns
Output Enable to Low-Z Output
tOLZ
55
ns
Byte Select to Low-Z Output
tBZ
10
10
ns
Chip Disable to High-Z Output
tHZ
0
20
0
20
ns
Output Disable to High-Z Output
tOHZ
0
20
0
20
ns
Byte Select Disable to High-Z Output
tBHZ
0
20
0
20
ns
Output Hold from Address Change
tOH
10
10
ns
Write Cycle Time
tWC
55
70
ns
Chip Enable to End of Write
tCW
45
50
ns
Address Valid to End of Write
tAW
45
50
ns
Byte Select to End of Write
tBW
45
50
ns
Write Pulse Width
tWP
40
40
ns
Address Setup Time
tAS
00
ns
Write Recovery Time
tWR
00
ns
Write to High-Z Output
tWHZ
20
20
ns
Data to Write Time Overlap
tDW
40
40
ns
Data Hold from Write Time
tDH
00
ns
End Write to Low-Z Output
tOW
55
ns


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