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TDA4655T Datasheet(PDF) 8 Page - NXP Semiconductors |
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TDA4655T Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 17 page  June 1993 8 Philips Semiconductors Preliminary specification Generic multi-standard decoder TDA4655 fg cut-off frequency −3 dB − 730 − kHz td chrominance delay time 400 500 600 ns S/N signal to noise ratio for 100 mV (p-p) input signal and nominal output voltages note 3 40 −− dB V1, V3 residual carrier at CD outputs: 1 × subcarrier frequency (peak-to-peak value) −− 10 mV 2 × subcarrier frequency (peak-to-peak value) −− 20 mV ∆V3 shift of demodulated f0 level relative to blanking level −(B-Y) output note 9 − 0 ±13 mV ∆V1 −(R-Y) output − 0 ±10 mV Impedance and currents see PAL or NTSC specification Capacitor for SECAM de-emphasis (pin 2) C2 value of external capacitor − 220 − pF RA value of internal de-emphasis resistors Tamb = +35 °C 2.4 2.8 3.2 k Ω RB 4.8 5.6 6.4 k Ω ∆(RA/RB) relative tolerance of de-emphasis resistors −−±5% Capacitors for SECAM demodulator control (pins 4 and 10; note 6) ∆V1, 3 shift of demodulated f0 level due to external leakage current Cext = 220 nF −− 0.3 mV/nA Resistor for SECAM oscillator (pin 7) V7 DC voltage 2.4 2.81 3.2 V R7 value of external resistor ( ±1%) − 5.62 − k Ω C7 value of external capacitor ( ±20%) - 10 - nF Chrominance input (pin 11) V11 input signal (peak-to-peak value) note 7 20 200 400 mV R11 input resistance 16 20 24 k Ω C11 input capacitance −− 10 pF Capacitor for ACC (pin 12; note 8) ∆V 1, 3 change of CD output signals during field blanking due to external leakage current Cext = 100 nF − 0.2 − %/nA Hue control (NTSC) and service switch (pin 13) φ phase shift of reference carrier relative to phase at open-circuit pin 13 V13 =3V −30 −−° V13 = open circuit −50 +5 ° V13 =5V +30 −−° V13 internal bias voltage (proportional to supply voltage) pin 13 open circuit 3.8 4.0 4.2 V R13 input resistance 25 30 35 k Ω SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
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