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TC10722.8VCT713 Datasheet(PDF) 2 Page - Microchip Technology

No. de pieza TC10722.8VCT713
Descripción Electrónicos  50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass
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Fabricante Electrónico  MICROCHIP [Microchip Technology]
Página de inicio  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

TC10722.8VCT713 Datasheet(HTML) 2 Page - Microchip Technology

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TC1072/TC1073
DS21354D-page 2
© 2007 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (VIN + 0.3V)
Power Dissipation................Internally Limited (Note 6)
Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < TJ < 125°C
Storage Temperature..........................-65°C to +150°C
† Note: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC1072/TC1073 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, VIN =VOUT + 1V, IL = 0.1 mA, CL =3.3 μF, SHDN >VIH, TA =+25°C.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VIN
Input Operating Voltage
2.7
6.0
V
Note 9
IOUTMAX
Maximum Output Current
50
100
mA
mA
TC1072
TC1073
VOUT
Output Voltage
VR
2.5%
VR ±0.5% VR + 2.5%
V
Note 1
TCVOUT
VOUT Temperature Coefficient
20
40
ppm/°C Note 2
ΔVOUT/ΔVIN Line Regulation
0.05
0.35
%(VR + 1V) ≤ VIN ≤ 6V
ΔVOUT/VOUT Load Regulation
0.5
2.0
%IL = 0.1 mA to IOUTMAX
(Note 3)
VIN-VOUT
Dropout Voltage
2
65
85
180
120
250
mV
IL =0.1 mA
IL =20mA
IL =50mA
IL = 100 mA (Note 4),
TC1073
IIN
Supply Current
50
80
µA
SHDN =VIH, IL = 0 (Note 8)
IINSD
Shutdown Supply Current
0.05
0.5
µA
SHDN =0V
PSRR
Power Supply Rejection Ratio
64
dB
FRE ≤ 1kHz
IOUTSC
Output Short Circuit Current
300
450
mA
VOUT =0V
ΔVOUT/ΔPD
Thermal Regulation
0.04
V/W
Notes 5, 6
TSD
Thermal Shutdown Die Temperature
160
°C
ΔTSD
Thermal Shutdown Hysteresis
10
°C
eN
Output Noise
260
nV/
√Hz IL =IOUTMAX
470 pF from Bypass to GND
Note
1:
VR is the regulator output voltage setting. For example: VR = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
2:
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
4:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
5:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN =6V for T = 10 ms.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
7:
Hysteresis voltage is referenced by VR.
8:
Apply for Junction Temperatures of -40°C to +85°C.
9:
The minimum VIN has to justify the conditions = VIN ≥ VR +VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX.
TC VOUT = (VOUTMAX – VOUTMIN) x 106
VOUT x ΔT


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