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SI9925DY Datasheet(PDF) 2 Page - Vishay Siliconix

No. de pieza SI9925DY
Descripción Electrónicos  Dual N-Channel 2.5-V (G-S) MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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SI9925DY Datasheet(HTML) 2 Page - Vishay Siliconix

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Si9925DY
Vishay Siliconix
www.vishay.com
2
Document Number: 70145
S-03950—Rev. N, 26-May-03
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
0.8
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 10 V, VGS = 0 V
1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V, TJ = 70_C
5
mA
On-State Drain Currentb
ID(on)
VDS w 5 V, VGS = 5 V
30
A
VGS = 7.2 V, ID = 5.0 A
0.025
0.038
0.045
Drain Source On State Resistanceb
r
VGS = 4.5 V, ID = 5.0 A
0.041
0.05
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = 3.0 V, ID = 3.9 A
0.050
0.06
W
VGS = 2.5 V, ID = 1 A
0.062
0.08
Forward Transconductanceb
gfs
VDS = 10 V, ID = 5.0 A
14
S
Diode Forward Voltageb
VSD
IS =5.0 A, VGS = 0 V
0.81
1.2
V
Dynamica
Total Gate Charge
Qg
9
20
Gate-Source Charge
Qgs
VDS = 6 V, VGS = 4.5 V, ID = 5.0 A
2
nC
Gate-Drain Charge
Qgd
2.6
Gate Resistance
Rg
1
2.9
W
Turn-On Delay Time
td(on)
14
40
Rise Time
tr
VDD = 6 V, RL = 6 W
13
30
Turn-Off Delay Time
td(off)
VDD = 6 V, RL = 6 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
35
60
ns
Fall Time
tf
9
30
Source-Drain Reverse Recovery Time
trr
IF = 5.0 A, di/dt = 100 A/ms
60
150
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.


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