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TC623 Datasheet(PDF) 2 Page - Microchip Technology |
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TC623 Datasheet(HTML) 2 Page - Microchip Technology |
2 / 12 page TC623 DS21441C-page 2 © 2006 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Supply Voltage ......................................................5.5V Input Voltage Any Input .. (GND – 0.3V) to (VDD +0.3V) Package Power Dissipation (TA ≤ 70°C) Plastic DIP ............................................730 mW SOIC.....................................................470 mW Derating Factors Plastic DIP ...........................................8 mW/°C SOIC ....................................................6 mW/°C Operating Temperature V Version .................................-40°C to +125°C E Version ...................................-40°C to +85°C C Version ...................................... 0°C to +70°C Storage Temperature..........................-65°C to +150°C *Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC623 ELECTRICAL SPECIFICATIONS Electrical Characteristics: Over Operating Temperature Range, VDD = 2.7V to 4.5V, unless otherwise specified. Symbol Parameter Min Typ. Max Unit Test Conditions VDD Supply Voltage Range 2.7 — 4.5 V IDD Supply Current — 150 250 μA2.7V ≤ VDD ≤ 4.5V TSET Absolute Accuracy T - 3 T ±1 T + 3 °C T = Programmed Temperature VOH Output Voltage High 0.9 x VDD 0.8 x VDD — — — — V V IOH = 250 μA IOH = 500 μA VOL Output Voltage Low — — — — 0.1 x VDD 0.2 x VDD V V IOL = 500 μA IOL = 1 mA HYS Hysteresis — — -2 °C Falling Temperature |
Número de pieza similar - TC623_06 |
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Descripción similar - TC623_06 |
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