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STK15C68-NF25I Datasheet(PDF) 8 Page - Simtek Corporation

No. de pieza STK15C68-NF25I
Descripción Electrónicos  32Kx8 PowerStore nvSRAM
Download  14 Pages
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Fabricante Electrónico  SIMTEK [Simtek Corporation]
Página de inicio  http://www.simtek.com
Logo SIMTEK - Simtek Corporation

STK15C68-NF25I Datasheet(HTML) 8 Page - Simtek Corporation

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February, 2007
Document Control #ML0016 Rev 0.3
STK15C88
The STK15C88 is a versatile memory chip that pro-
vides several modes of operation. The STK15C88
can operate as a standard 32K x 8 SRAM. It has a
32K x 8 nonvolatile element shadow to which the
SRAM
information can be copied, or from which the
SRAM
can be updated in nonvolatile mode.
NOISE CONSIDERATIONS
Note that the STK15C88 is a high-speed memory
and so must have a high-frequency bypass capaci-
tor of approximately 0.1
μF connected between V
CC
and V
SS, using leads and traces that are as short as
possible. As with all high-speed CMOS ICs, normal
careful routing of power, ground and signals will help
prevent noise problems.
SRAM READ
The STK15C88 performs a READ cycle whenever E
and G are low and W is high. The address specified
on pins A
0-14 determines which of the 32,768 data
bytes will be accessed. When the READ is initiated
by an address transition, the outputs will be valid
after a delay of t
AVQV (READ cycle #1). If the READ is
initiated by E or G, the outputs will be valid at t
ELQV or
at t
GLQV, whichever is later (READ cycle #2). The data
outputs will repeatedly respond to address changes
within the t
AVQV access time without the need for tran-
sitions on any control input pins, and will remain valid
until another address change or until E or G is
brought high.
SRAM WRITE
A WRITE cycle is performed whenever E and W are
low. The address inputs must be stable prior to
entering the WRITE cycle and must remain stable
until either E or W goes high at the end of the cycle.
The data on the common I/O pins DQ
0-7 will be writ-
ten into the memory if it is valid t
DVWH before the end
of a W controlled WRITE or t
DVEH before the end of an
E controlled WRITE.
It is recommended that G be kept high during the
entire WRITE cycle to avoid data bus contention on
the common I/O lines. If G is left low, internal cir-
cuitry will turn off the output buffers t
WLQZ after W
goes low.
SOFTWARE NONVOLATILE STORE
The STK15C88 software STORE cycle is initiated by
executing sequential READ cycles from six specific
address locations. During the STORE cycle an erase
of the previous nonvolatile data is first performed,
followed by a program of the nonvolatile elements.
The program operation copies the SRAM data into
nonvolatile memory. Once a STORE cycle is initi-
ated, further input and output are disabled until the
cycle is completed.
Because a sequence of READs from specific
addresses is used for STORE initiation, it is impor-
tant that no other READ or WRITE accesses inter-
vene in the sequence or the sequence will be
aborted and no STORE or RECALL will take place.
To initiate the software STORE cycle, the following
READ
sequence must be performed:
1.
Read address
0E38 (hex)
Valid READ
2.
Read address
31C7 (hex)
Valid READ
3.
Read address
03E0 (hex)
Valid READ
4.
Read address
3C1F (hex)
Valid READ
5.
Read address
303F (hex)
Valid READ
6.
Read address
0FC0 (hex)
Initiate STORE cycle
The software sequence must be clocked with E con-
trolled READs.
Once the sixth address in the sequence has been
entered, the STORE cycle will commence and the
chip will be disabled. It is important that READ cycles
and not WRITE cycles be used in the sequence,
although it is not necessary that G be low for the
sequence to be valid. After the t
STORE cycle time has
been fulfilled, the SRAM will again be activated for
READ
and WRITE operation.
SOFTWARE NONVOLATILE RECALL
A software RECALL cycle is initiated with a sequence
of READ operations in a manner similar to the soft-
ware STORE initiation. To initiate the RECALL cycle,
the following sequence of READ operations must be
performed:
1.
Read address
0E38 (hex)
Valid READ
2.
Read address
31C7 (hex)
Valid READ
3.
Read address
03E0 (hex)
Valid READ
4.
Read address
3C1F (hex)
Valid READ
5.
Read address
303F (hex)
Valid READ
6.
Read address
0C63 (hex)
Initiate RECALL cycle
nvSRAM OPERATION


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