GS2N7002K datasheet(1/4 Pages) GTM

No. de pieza	GS2N7002K

Descripción Electrónicos	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Fabricante Electrónico	GTM [GTM CORPORATION]

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GS2N7002K

Page: 1/4

ISSUED DATE :2005/09/19

REVISED DATE :

G

G S

S 22N

N 77000022K

K

N

N -- C

C H

H A

A N

N N

N E

E L

L E

E N

N H

H A

A N

N C

C E

E M

M E

E N

N T

T M

M O

O D

D E

E P

P O

O W

W E

E R

R M

M O

O S

S F

F E

E T

T

Description

The GS2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,

extremely efficient and cost-effectiveness device.

The GS2N7002K is universally used for all commercial-industrial applications.

Features

*Simple Drive Requirement

*Small Package Outline

*RoHS Compliant

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

f 20

V

Continuous Drain Current3, VGS@10V

ID @TA=25 :

640

mA

Continuous Drain Current3, VGS@10V

ID @TA=70 :

500

mA

Pulsed Drain Current1,2

IDM

950

mA

Power Dissipation

PD @TA=25 :

0.35

W

Linear Derating Factor

0.003

W/

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient3 Max.

Rthj-a

360

/W

BVDSS

60V

RDS(ON)

2

ID

640mA

Pb Free Plating Product

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