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TEA0675T Datasheet(PDF) 6 Page - NXP Semiconductors |
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TEA0675T Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 32 page 1996 Jun 07 6 Philips Semiconductors Preliminary specification Dual Dolby* B-type noise reduction circuit for playback applications TEA0675 CHARACTERISTICS VCC = 10 V; f = 20 Hz to 20 kHz; Tamb =25 °C; all levels are referenced to 387.5 mV (RMS) (0 dB) at test point (TP) pin OUTA or OUTB; see Fig.1; NR on/AMS off; EQ switch in the 70 µs position; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCC supply voltage 7.6 10 12 V ICC supply current − 26 31 mA αm channel matching f = 1 kHz; Vo = 0 dB; NR off −0.5 − +0.5 dB THD total harmonic distortion (2nd and 3rd harmonic) f = 1 kHz; Vo =0dB − 0.08 0.15 % f = 10 kHz; Vo =10dB − 0.15 0.3 % HR headroom at output VCC = 7.6 V; THD = 1%; f = 1 kHz 12 −− dB signal plus noise-to-noise ratio internal gain 40 dB, linear; CCIR/ARM weighted; decode mode; see Fig.25 78 84 − dB PSRR power supply ripple rejection Vi(rms) = 0.25 V; f = 1 kHz; see Fig.22 52 57 − dB fo frequency response; referenced to TP encode mode; see Fig.25 Vo = −25 dB; f = 0.2 kHz −22.9 −24.4 −25.9 dB Vo = 0 dB; f = 1 kHz −1.5 0 +1.5 dB Vo = −25 dB; f=1kHz −17.8 −19.3 −20.8 dB Vo = −25 dB; f=5kHz −18.1 −19.6 −21.1 dB Vo = −35 dB; f = 10 kHz −24.4 −25.9 −27.4 dB αcs channel separation Vo = 10 dB; f = 1 kHz; see Fig.23 57 63 − dB αcc crosstalk between active and inactive input f = 1 kHz; Vo = 10 dB; NR off; see Fig.23 70 77 − dB RL load resistance at output AC-coupled; f = 1 kHz; Vo = 12 dB; THD = 1% 10 −− k Ω Gv voltage gain of pre-amplifier from pin INA1 or INA2 to pin EQFA and from pin INB1 or INB2 to pin EQFB; f = 1 kHz 29 30 31 dB VI(offset)(DC) DC input offset voltage − 2 − mV Ii(bias) input bias current − 0.1 0.4 µA REQ equalization resistor 4.7 5.8 6.9 k Ω Ri input resistance head inputs 60 100 − k Ω Av open-loop amplification pin INA1 or INA2 to pin EQA and pin INB1 or INB2 to pin EQB f = 10 kHz 80 86 − dB f = 400 Hz 104 110 − dB SN + N -------------- |
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