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TEA1205AT Datasheet(PDF) 9 Page - NXP Semiconductors |
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TEA1205AT Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 16 page 1998 Mar 24 9 Philips Semiconductors Preliminary specification High efficiency DC/DC converter TEA1205AT Notes 1. The NFET current limit is set by an external 1% accurate resistor Rlim connected between pin 7 and pin 6 (ground). The typical maximum instantaneous current is defined as: Ilim = 890 V/ Rlim so the use of Rlim = 315 Ω will lead to a typical maximum current value of 2.83 A. The average inductor current during current limit also depends on inductance value and resistive losses in all components in the power path. In normal application and when using Rlim = 315 Ω, the average inductor current will be limited to 2.3 A typical. 2. V3 is the voltage at pin 3 (OUT). 3. If the applied high level is less than V3 − 1 V, the quiescent current level of the device will increase. The maximum increase is 300 µA in the event that pin 2 is at 2.0 V. Timing fsw switching frequency 150 200 240 kHz tres response time from standby to Pmax − 25 −µs fsync synchronisation input frequency − 13 − MHz Temperature Tamb operating ambient temperature −20 +25 +80 °C Tmax internal cut-off temperature 150 165 180 °C Digital levels VlL LOW-level input voltage pins 1, 2, 7 and 8 0 − 0.4 V VIH HIGH-level input voltage pin 1 note 2 V3 − 0.4 − V3 + 0.3 V VIH HIGH-level input voltage pin 2 notes 2 and 3 2.0 − V3 + 0.3 V VIH HIGH-level input voltage pin 8 notes 2 and 3 2.9 − V3 + 0.3 V Sense pin resistance RSENSE SENSE pin resistance to GND up to 3.3 V mode 437.2 546.5 655.8 k Ω up to 5.0 V mode 662.2 827.8 993.4 k Ω SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
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