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TEA1205AT Datasheet(PDF) 9 Page - NXP Semiconductors

No. de pieza TEA1205AT
Descripción Electrónicos  High efficiency DC/DC converter
Download  16 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TEA1205AT Datasheet(HTML) 9 Page - NXP Semiconductors

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1998 Mar 24
9
Philips Semiconductors
Preliminary specification
High efficiency DC/DC converter
TEA1205AT
Notes
1. The NFET current limit is set by an external 1% accurate resistor Rlim connected between pin 7 and pin 6 (ground).
The typical maximum instantaneous current is defined as: Ilim = 890 V/ Rlim so the use of Rlim = 315 Ω will lead to a
typical maximum current value of 2.83 A. The average inductor current during current limit also depends on
inductance value and resistive losses in all components in the power path. In normal application and when using
Rlim = 315 Ω, the average inductor current will be limited to 2.3 A typical.
2. V3 is the voltage at pin 3 (OUT).
3. If the applied high level is less than V3 − 1 V, the quiescent current level of the device will increase. The maximum
increase is 300
µA in the event that pin 2 is at 2.0 V.
Timing
fsw
switching frequency
150
200
240
kHz
tres
response time from standby to
Pmax
25
−µs
fsync
synchronisation input frequency
13
MHz
Temperature
Tamb
operating ambient temperature
−20
+25
+80
°C
Tmax
internal cut-off temperature
150
165
180
°C
Digital levels
VlL
LOW-level input voltage pins
1, 2, 7 and 8
0
0.4
V
VIH
HIGH-level input voltage pin 1
note 2
V3 − 0.4 −
V3 + 0.3 V
VIH
HIGH-level input voltage pin 2
notes 2 and 3
2.0
V3 + 0.3 V
VIH
HIGH-level input voltage pin 8
notes 2 and 3
2.9
V3 + 0.3 V
Sense pin resistance
RSENSE
SENSE pin resistance to GND
up to 3.3 V mode
437.2
546.5
655.8
k
up to 5.0 V mode
662.2
827.8
993.4
k
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT


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