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SSC-MBT683 Datasheet(PDF) 3 Page - Seoul Semiconductor |
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SSC-MBT683 Datasheet(HTML) 3 Page - Seoul Semiconductor |
3 / 11 page 4. Electro-Optical Characteristics (Ta=25ºC) Parameter Symbol Condition Min Typ Max Unit Forward Voltage (per die) V F I F =20 mA 2.7 3.3 4.0 V Reverse Current (per die) I R V R=5V - - 10 µA Luminance Intensity *1 I V I F =60 mA 300 580 860 mcd Luminance Flux Φ V I F =60 mA - 1.8 - lm Dominant Wavelength λ d I F =60 mA 465 470 477 nm Peak Wavelength λ P I F =60mA - 463 - nm Spectral Bandwidth ∆λ I F =60 mA - 27 - nm Viewing Angle *2 2 θ½ I F =60 mA - 120 - deg Optical Efficiency η opt I F =60 mA - 9 - lm/W *1 The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%. *2 2 θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity. [Note] All measurements were made under the standardized environment of SSC. SEOUL SEMICONDUCTOR CO., LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, 153-023, Korea Phone : 82-2-2106-7305~6 - 3/9 - SSC-MBT722 SSC-QP-7-03-08(REV.00) |
Número de pieza similar - SSC-MBT683 |
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