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AMB0480XXRJ8 Datasheet(PDF) 10 Page - Integrated Device Technology

No. de pieza AMB0480XXRJ8
Descripción Electrónicos  ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES
Download  15 Pages
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Fabricante Electrónico  IDT [Integrated Device Technology]
Página de inicio  http://www.idt.com
Logo IDT - Integrated Device Technology

AMB0480XXRJ8 Datasheet(HTML) 10 Page - Integrated Device Technology

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COMMERCIALTEMPERATURERANGE
IDTAMB0480
ADVANCEDMEMORYBUFFERFORFULLYBUFFEREDDIMM
PIN DESCRIPTION
Signal
Type
Description
Channel Interface
PN[13:0]
O
Northbound Output Data: High speed serial signal. Read path from AMB toward host on primary side of the DIMM connector.
PN[13:0]
O
Northbound Output Data Complement
SN[13:0]
I
Northbound Input Data: High speed serial signal. Read path from the previous AMB toward this AMB on secondary side of the DIMM
connector.
SN[13:0]
I
Northbound Input Data Complement
PS[9:0]
I
Southbound Input Data: High speed serial signal. Write path from host toward AMB on primary side of the DIMM connector.
PS[9:0]
I
Southbound Input Data Complement
SS[9:0]
O
Southbound Output Data: High speed serial signal. Write path from this AMB toward next AMB on secondary side of the DIMM connector.
These output buffers are disabled for the last AMB on the channel.
SS[9:0]
O
Southbound Output Data Complement
FBDRES
A
External 100
ΩprecisionresistorconnectedtoVCC.On-dieterminationcalibratedagainstthisresistor.
DRAM Interface
CB[7:0]
I/O
Check bits
DQ[63:0]
I/O
Data
DQS[17:0]
I/O
Data Strobe: DDR2 data and check-bit strobe.
DQS[17:0]
I/O
Data Strobe Complement: DDR2 data and check-bit strobe complements.
A0A-A15A,
O
Address: Used for providing multiplexed row and column address to SDRAM.
A0B-A15B
BA0A-BA2A,
O
Bank Active: Used to select the bank within a rank.
BA0B-BA2B
RASA, RASB
O
Row Address Strobe: Used with
CS, CAS, and WE to specify the SDRAM command.
CASA, CASB
O
Column Address Strobe: Used with
CS, RAS, and WE to specify the SDRAM command.
WEA, WEB
O
Write Enable: Used with
CS, CAS, and RAS to specify the SDRAM command.
CS0A-CS1A,
O
Chip Select: Used with
CAS, RAS, and WE to specify the SDRAM command. These signals are used for selecting one of two SDRAM
ranks.
CS0 is used to select the first rank and CS1 is used to select the second rank.
CKE0A-CKE1A,
O
Clock Enable: DIMM command register enable.
CKE0B-CKE1B
ODT0A, ODT0B
O
DIMM On-Die-Termination: Dynamic ODT enables for each DIMM on the channel.
CLK[3:0]
O
Clock: Clocks to DRAMs. CLK0 and CLK1 are always used. CLK2 and CLK3 are used when the AMB is configured for dual rank DIMMs.
CLK[3:0]
O
Clock Complement: Clocks to DRAMs.
DDR Compensation
DDRC_C14
A
DDR Compensation Common: Common return (ground) pin for DDRC_B18 and DDRC_C18
DDRC_B18
A
DDR Compensation Ball Resistor (825
Ω)connectedtoCompensationCommonabove
DDRC_C18
A
DDR Compensation Ball Resistor (121
Ω)connectedtoCompensationCommonabove
DDRC_B12
A
DDR Compensation Ball Resistor (82
Ω)connectedto VSS
DDRC_C12
A
DDR Compensation Ball Resistor (82
Ω)connectedtoVDD
CS0B-CS1B


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