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STP12NM50N Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STP12NM50N
Descripción Electrónicos  N-channel 500V - 0.29廓 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh??Power MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP12NM50N Datasheet(HTML) 5 Page - STMicroelectronics

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STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
Electrical characteristics
5/18
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=250 V, ID= 5.5A,
RG=4.7Ω, VGS=10V
(see Figure 15)
15
15
60
14
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
11
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
44
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=11A, VGS=0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11A,
di/dt = 100A/µs,
VDD=100V, Tj=25°C
340
3.5
20
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11A,
di/dt = 100A/µs,
VDD=100V, Tj=150°C
420
4
20
ns
µC
A


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