TIPL765 datasheet(2/7 Pages) POINN

No. de pieza	TIPL765

Descripción Electrónicos	NPN SILICON POWER TRANSISTORS

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Fabricante Electrónico	POINN [Power Innovations Ltd]

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TIPL765, TIPL765A

NPN SILICON POWER TRANSISTORS

2

AUGUST 1978 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VCEO(sus)

Collector-emitter

sustaining voltage

IC = 100 mA

L = 25 mH

(see Note 2)

TIPL765

TIPL765A

400

450

V

ICES

Collector-emitter

cut-off current

VCE = 850 V

VCE = 1000 V

VCE = 850 V

VCE = 1000 V

VBE = 0

TC = 100°C

TIPL765

TIPL765A

TIPL765

TIPL765A

50

200

µA

ICEO

Collector cut-off

current

VCE = 400 V

VCE = 450 V

IB = 0

TIPL765

TIPL765A

50

µA

IEBO

Emitter cut-off

current

VEB =

10 V

IC = 0

1

mA

hFE

Forward current

transfer ratio

VCE =

5 V

IC = 0.5 A

(see Notes 3 and 4)

15

60

VCE(sat)

Collector-emitter

saturation voltage

IB =

0.4 A

IB =

1 A

IB =

2 A

IB =

2 A

IC =

2 A

IC =

5 A

IC = 10 A

(see Notes 3 and 4)

TC = 100°C

0.5

1.0

2.5

5.0

V

VBE(sat)

Base-emitter

saturation voltage

IB =

0.4 A

IB =

1 A

IB =

2 A

IB =

2 A

IC =

2 A

IC =

5 A

IC = 10 A

(see Notes 3 and 4)

TC = 100°C

1.1

1.3

1.7

1.6

V

ft

Current gain

bandwidth product

VCE =

10 V

IC = 0.5 A

f =

1 MHz

8

MHz

Cob

Output capacitance

VCB =

20 V

IE = 0

f = 0.1 MHz

150

pF

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

1

°C/W

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS †

MIN

TYP

MAX

UNIT

tsv

Voltage storage time

IC = 10 A

VBE(off) = -5 V

IB(on) = 2 A

(see Figures 1 and 2)

2

µs

trv

Voltage rise time

300

ns

tfi

Current fall time

200

ns

tti

Current tail time

50

ns

txo

Cross over time

400

ns

tsv

Voltage storage time

IC = 10 A

VBE(off) = -5 V

IB(on) = 2 A

TC = 100°C

(see Figures 1 and 2)

3.5

µs

trv

Voltage rise time

400

ns

tfi

Current fall time

300

ns

tti

Current tail time

80

ns

txo

Cross over time

500

ns

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