IRL3714SPBF datasheet(1/12 Pages) IRF

No. de pieza	IRL3714SPBF

Descripción Electrónicos	SMPS MOSFET HEXFET짰Power MOSFET

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Fabricante Electrónico	IRF [International Rectifier]

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Symbol

Parameter

Max.

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-to-Source Voltage

± 20

V

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

36

ID @ TC = 70°C

Continuous Drain Current, VGS @ 10V

31

A

IDM

Pulsed Drain Current

140

PD @TC = 25°C

Maximum Power Dissipation

47

W

PD @TC = 70°C

Maximum Power Dissipation

33

W

Linear Derating Factor

0.31

W/°C

TJ , TSTG

Junction and Storage Temperature Range

-55 to + 175

°C

www.irf.com

1

07/20/04

IRL3714PbF

IRL3714SPbF

IRL3714LPbF

SMPS MOSFET

HEXFET® Power MOSFET

VDSS

RDS(on) max

ID

20V

20m

Ω

36A

Notes

through are on page 11

Absolute Maximum Ratings

D2Pak

IRL3714S

TO-220AB

IRL3714

TO-262

IRL3714L

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

3.2

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient

–––

62

RθJA

Junction-to-Ambient (PCB mount)

–––

40

Applications

Benefits

l Ultra-Low Gate Impedance

l Very Low RDS(on) at 4.5V VGS

l Fully Characterized Avalanche Voltage

and Current

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Computer Processor Power

l Lead-Free

PD - 95580

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IRL3714SPBF Datasheet(PDF) 1 Page - International Rectifier

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