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IRF7353D1PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7353D1PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRF7353D1PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 — — V VGS = 0V, ID = 250µA RDS(on) Static Drain-to-Source On-Resistance — 0.023 0.032 VGS = 10V, ID = 5.8A — 0.032 0.046 VGS = 4.5V, ID = 4.7A VGS(th) Gate Threshold Voltage 1.0 — — V VDS = VGS, ID = 250µA gfs Forward Transconductance — 14 — S VDS = 24V, ID = 5.8A IDSS Drain-to-Source Leakage Current — — 1.0 VDS = 24V, VGS = 0V —— 25 VDS = 24V, VGS = 0V, TJ = 55°C IGSS Gate-to-Source Forward Leakage — — 100 VGS = 20V Gate-to-Source Reverse Leakage — — -100 VGS = -20V Qg Total Gate Charge — 22 33 ID = 5.8A Qgs Gate-to-Source Charge — 2.6 3.9 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge — 6.4 9.6 VGS = 10V (see figure 8) td(on) Turn-On Delay Time — 8.1 12 VDD = 15V tr Rise Time — 8.9 13 ID = 1.0A td(off) Turn-Off Delay Time — 26 39 RG = 6.0Ω tf Fall Time — 17 26 RD = 15Ω Ciss Input Capacitance — 650 — VGS = 0V Coss Output Capacitance — 320 — pF VDS = 25V Crss Reverse Transfer Capacitance — 130 — ƒ = 1.0MHz (see figure 7) MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Ω µA nA ns Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 2.5 A ISM Pulsed Source Current (Body Diode) — — 30 VSD Body Diode Forward Voltage — 0.78 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V trr Reverse Recovery Time (Body Diode) — 45 68 ns TJ = 25°C, IF = 1.7A Qrr Reverse Recovery Charge — 58 87 nC di/dt = 100A/µs  MOSFET Source-Drain Ratings and Characteristics Parameter Max. Units. Conditions IF(av) Max. Average Forward Current 2.7 50% Duty Cycle. Rectangular Wave, TA = 25°C 1.9 TA = 70°C ISM Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated Surge current 11 10ms sine or 6ms Rect. pulse load condition & with V RRM applied A A Schottky Diode Maximum Ratings Schottky Diode Electrical Specifications V mA Parameter Max. Units Conditions VFM Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C 0.62 IF = 2.0A, TJ = 25°C 0.39 IF = 1.0A, TJ = 125°C 0.57 IF = 2.0A, TJ = 125°C . IRM Max. Reverse Leakage current 0.06 VR = 30V TJ = 25°C 16 TJ = 125°C Ct Max. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated VR See Fig. 14 |
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