FM25CL04-G datasheet(9/12 Pages) RAMTRON

No. de pieza	FM25CL04-G

Descripción Electrónicos	4Kb FRAM Serial 3V Memory

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Fabricante Electrónico	RAMTRON [Ramtron International Corporation]

Página de inicio	http://www.ramtron.com

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Rev. 3.1

May 2005

Page 9 of 12

Electrical Specifications

Absolute Maximum Ratings

Symbol

Description

Ratings

VDD

Power Supply Voltage with respect to VSS

-1.0V to +5.0V

VIN

Voltage on any pin with respect to VSS

-1.0V to +5.0V

and VIN < VDD+1.0V

TSTG

Storage Temperature

-55

°C to + 125°C

TLEAD

Lead Temperature (Soldering, 10 seconds)

300

° C

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress

rating only, and the functional operation of the device at these or any other conditions above those listed in the operational

section of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may

affect device reliability.

DC Operating Conditions (TA = -40° C to + 85° C, VDD = 2.7V to 3.65V unless otherwise specified)

Symbol

Parameter

Min

Typ

Max

Units

Notes

VDD

Power Supply Voltage

2.7

3.3

3.65

V

IDD

VDD Supply Current

@ SCK = 100 kHz

@ SCK = 1.0 MHz

@ SCK = 5.0 MHz

@ SCK = 20.0 MHz

0.02

0.1

0.5

2

0.03

0.17

0.75

3.0

mA

1

ISB

Standby Current

-

1

µA

2

ILI

Input Leakage Current

-

±1

µA

3

ILO

Output Leakage Current

-

±1

µA

3

VIH

Input High Voltage

0.7 VDD

VDD + 0.5

V

VIL

Input Low Voltage

-0.3

0.3 VDD

V

VOH

Output High Voltage

@ IOH = -2 mA

VDD – 0.8

-

V

VOL

Output Low Voltage

@ IOL = 2 mA

-

0.4

V

VHYS

Input Hysteresis

0.05 VDD

-

V

4

Notes

1.

SCK toggling between VDD-0.3V and VSS, other inputs VSS or VDD-0.3V.

2.

SCK = SI = /CS=VDD. All inputs VSS or VDD.

3.

VSS ≤ VIN ≤ VDD and VSS ≤ VOUT ≤ VDD.

4.

This parameter is characterized but not 100% tested.

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