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STGW39NC60VD Datasheet(PDF) 9 Page - STMicroelectronics |
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STGW39NC60VD Datasheet(HTML) 9 Page - STMicroelectronics |
9 / 14 page STGW39NC60VD Electrical characteristics 9/14 2.2 Frequency applications For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) ● The maximum power dissipation is limited by maximum junction to case thermal resistance: Equation 1 PD = ∆T / RTHJ-C considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C ● The conduction losses are: Equation 2 PC = IC * VCE(SAT) * δ with 50% of duty cycle, VCESAT typical value @125°C. ● Power dissipation during ON & OFF commutations is due to the switching frequency: Equation 3 PSW = (EON + EOFF) * freq. ● Typical values @ 125°C for switching losses are used (test conditions: VCE = 390V, VGE = 15V, RG = 10 Ohm). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3). |
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