STP10NK70ZFP datasheet(3/13 Pages) STMICROELECTRONICS

No. de pieza	STP10NK70ZFP

Descripción Electrónicos	N-CHANNEL 700V - 0.75廓 - 8.6A - TO220-TO220FP Zener-Protected SuperMESH??MOSFET

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STP10NK70Z - STP10NK70ZFP

2 Electrical characteristics

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2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Table 5.

Dynamic

Table 6.

Switching times

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown

Voltage

ID = 1mA, VGS= 0

700

V

IDSS

Zero Gate Voltage Drain

Current (VGS = 0)

VDS = Max Rating,

VDS = Max Rating,Tc = 125°C

1

50

µA

IGSS

Gate Body Leakage Current

(VDS = 0)

VGS = ±20V, VDS = 0

±

10

µA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID = 100 µA

33.75

4.5

V

RDS(on)

Static Drain-Source On

Resistance

VGS= 10 V, ID= 4.5 A

0.75

0.85

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs Note 4

Forward Transconductance

VDS =15V, ID = 4.5A

7.7

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS =25V, f=1 MHz, VGS=0

2000

190

41

pF

Coss eq.

Note 5

Equivalent Ouput Capacitance VGS=0, VDS =0V to 560V

98

pF

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD=560V, ID = 9 A

VGS =10V

(see Figure 17)

64

12

33

90

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay Time

Rise Time

VDD=350 V, ID=4.5 A,

RG=4.7Ω, VGS=10V

(see Figure 18)

22

19

ns

td(off)

tf

Turn-off Delay Time

Fall Time

VDD=350 V, ID=4.5A,

RG=4.7Ω, VGS=10V

(see Figure 18)

46

19

ns

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD=560 V, ID=9A,

RG=4.7Ω, VGS=10V

(see Figure 18)

11

10

22

ns

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