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TPS28226DRBR Datasheet(PDF) 7 Page - Texas Instruments

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No. de pieza TPS28226DRBR
Descripción Electrónicos  High-Frequency 4-A Sink Synchronous MOSFET Drivers
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TPS28226DRBR Datasheet(HTML) 7 Page - Texas Instruments

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TPS28226
SLUS791 – OCTOBER 2007
ELECTRICAL CHARACTERISTICS (continued)
VDD = 7.2 V, EN/PG pulled up to VDD by 100-kΩ resistor, TA = TJ = –40°C to 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
LOWER GATE DRIVER OUTPUT (LGATE)
Source resistance
500 mA source current
1.0
2.0
Ω
Source current(3)
VLGATE = 2.5 V
2.0
A
tRL
Rise time(3)
CL = 3 nF
10
ns
Sink resistance
500 mA sink current
0.4
1.0
Ω
Sink current(3)
VLGATE = 2.5 V
4.0
A
Fall time(3)
CL = 3 nF
5
ns
SWITCHING TIME
tDLU
UGATE turn-off propagation Delay
CL = 3 nF
14
tDLL
LGATE turn-off propagation Delay
CL = 3 nF
14
ns
tDTU
Dead time LGATE turn-off to UGATE turn-on
CL = 3 nF
14
tDTL
Dead time UGATE turn-off to LGATE turn-on
CL = 3 nF
14
BOOTSTRAP DIODE
VF
Forward voltage
Forward bias current 100 mA
1.0
V
THERMAL SHUTDOWN
Rising threshold(3)
150
160
170
Falling threshold(3)
130
140
150
°C
Hysteresis
20
(3)
Not tested in production
Copyright © 2007, Texas Instruments Incorporated
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Product Folder Link(s): TPS28226


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