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BUK7608-40B Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK7608-40B Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 14 page BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 3 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET VGS ≥ 10 V [1] Capped at 75 A due to package. Fig 1. Normalized total power dissipation as a function of solder point temperature Fig 2. Continuous drain current as a function of mounting base temperature Tmb =25 °C; IDM is single pulse. [1] Capped at 75 A due to package. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Tmb (°C) 0 200 150 50 100 003aac070 40 80 120 Pder (%) 0 Tmb (°C) 0 200 150 50 100 003aac081 40 80 120 ID (A) 0 (1) P der P tot P tot 25 °C () ------------------------ 100 % × = 003aac079 VDS (V) 10−1 102 10 1 102 10 103 ID (A) 1 (1) Limit RDSon = VDS / ID tp = 10 µs 1 ms 100 µs 10 ms 100 ms DC |
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