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BTA201W-600E Datasheet(PDF) 7 Page - NXP Semiconductors

No. de pieza BTA201W-600E
Descripción Electrónicos  1 A Three-quadrant triacs high commutation
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BTA201W-600E Datasheet(HTML) 7 Page - NXP Semiconductors

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BTA201W_SER_E_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 September 2007
7 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
7.
Dynamic characteristics
Table 6.
Dynamic characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
BTA201W-600E and BTA201W-800E
dVD/dt
rate of rise of off-state
voltage
VDM = 0.67VDRM(max); Tj = 125 °C;
exponential waveform; gate open circuit
600
-
-
V/
µs
dIcom/dt
rate of change of
commutating current
VDM = 400 V; Tj = 125 °C; IT(RMS) =4A;
gate open circuit
dVcom/dt =20V/µs
2.5
-
-
A/ms
dVcom/dt =10V/µs
3.5
-
-
A/ms
tgt
gate-controlled turn-on
time
ITM = 20 A; VD =VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
-2
-
µs
(1) T2
− G−
(2) T2+ G
(3) T2+ G+
Fig 7.
Normalized gate trigger voltage as a function of
junction temperature
Fig 8.
Normalized gate trigger current as a function of
junction temperature
Tj (°C)
−50
150
100
050
001aab101
0.8
1.2
1.6
0.4
VGT
VGT(25°C)
IGT
IGT(25°C)
Tj (°C)
−50
0
150
100
50
1
2
3
0
003aaa959
(1)
(2)
(3)
(1)
(2)
(3)


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