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CXK79M72C164GB Datasheet(PDF) 9 Page - Sony Corporation

No. de pieza CXK79M72C164GB
Descripción Electrónicos  18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
Download  28 Pages
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Fabricante Electrónico  SONY [Sony Corporation]
Página de inicio  http://www.sony.co.jp
Logo SONY - Sony Corporation

CXK79M72C164GB Datasheet(HTML) 9 Page - Sony Corporation

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SONY®
ΣRAM
CXK79M72C164GB / CXK79M36C164GB
Preliminary
18Mb 1x1Dp, HSTL, rev 1.3
9 / 28
June 19, 2003
Absolute Maximum Ratings
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other conditions other than those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
BGA Package Thermal Characteristics
I/O Capacitance
(TA =25
oC, f = 1 MHz)
Note: These parameters are sampled and are not 100% tested.
Parameter
Symbol
Rating
Units
Supply Voltage
VDD
-0.5 to +2.5
V
Output Supply Voltage
VDDQ
-0.5 to +2.3
V
Input Voltage (Address, Control, Data, Clock)
VIN
-0.5 to VDDQ+0.5 (2.3V max)
V
Input Voltage (EP2, EP3, MCL, MCH)
VMIN
-0.5 to VDD+0.5 (2.5V max)
V
Input Voltage (TCK, TMS, TDI)
VTIN
-0.5 to VDD+0.5 (2.5V max)
V
Operating Temperature
TA
0to 70
°C
Junction Temperature
TJ
0to110
°C
Storage Temperature
TSTG
-55 to 150
°C
Parameter
Symbol
Rating
Units
Junction to Case Temperature
Θ
JC
3.6
°C/W
Parameter
Symbol
Test conditions
Min
Max
Units
Input Capacitance
Address
CIN
VIN =0V
---
3.5
pF
Control
CIN
VIN =0V
---
3.5
pF
CK Clock
CKIN
VKIN =0V
---
4.0
pF
Output Capacitance
Data
COUT
VOUT =0V
---
4.5
pF
CQ Clock
COUT
VOUT =0V
---
4.5
pF


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