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MCZ33927R2 Datasheet(PDF) 9 Page - Freescale Semiconductor, Inc |
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MCZ33927R2 Datasheet(HTML) 9 Page - Freescale Semiconductor, Inc |
9 / 44 page Analog Integrated Circuit Device Data Freescale Semiconductor 9 33927 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS CHARGE PUMP Charge Pump High-Side Switch On-Resistance Low-Side Switch On-Resistance Regulation Threshold Difference(13)(15) RDS(on)_HS RDS(on)_LS VTHREG – – 250 6.0 5.0 500 10 9.4 900 Ω Ω mV Charge Pump Output Voltage(14), (15) IOUT = 40mA, 6.0V < VBAT < 8.0V IOUT = 40mA, VBAT > = 8.0V VCP 8.5 12 9.5 – – – V GATE DRIVE High-Side Driver On-Resistance (Sourcing) VPWR = VBAT = 16V, -40°C ≤ TA ≤ 25°C VPWR = VBAT = 16V, 25°C < TA ≤ 125°C RDS(on)_H_SRC – – – – 6.0 8.5 Ω High-Side Driver On-Resistance (Sinking) VPWR = VBAT = 16V RDS(on)_H_SINK – – 3.0 Ω High-Side Current Injection Allowed Without Malfunction(15), (16) IHS_INJ – – 0.5 A Low-Side Driver On-Resistance (Sourcing) VPWR = VBAT = 16V, -40°C ≤ TA ≤ 25°C VPWR = VBAT = 16V, 25°C < TA ≤ 125°C RDS(on)_L_SRC – – – – 6.0 8.5 Ω Low-Side Driver On-Resistance (Sinking) VPWR = VBAT = 16 V RDS(on)_L_SINK – – 3.0 Ω Low-Side Current Injection Allowed Without Malfunction(15), (16) ILS_INJ – – 0.5 Α Gate Source Voltage, VPWR = VBAT = 40V High-Side, IGATE = 0 (17) Low-Side, IGATE = 0 VGS_H VGS_L 13 13 14.8 15.4 16.5 17 V High-Side Gate Drive Output Leakage Current, Per Output(18) IHS_LEAK – – 18 µA Notes 13. When VLS is this amount below the normal VLS linear regulation threshold, the pump is enabled. 14. With recommended external components (1.0µF, MUR 120 diode). The Charge Pump is designed to supply the gate currents of a system with 100A FETs in a 12V application. 15. This parameter is a design characteristic, not production tested. 16. Current injection only occurs during output switch transitions. The IC is immune to specified injected currents for a duration of approximately 1 µs after an output switch transition. 1 µs is sufficient for all intended applications of this IC. 17. If a slightly higher gate voltage is required, larger bootstrap capacitors are required. At high duty cycles, the bootstrap voltage may not recover completely, leading to a higher output on-resistance. This effect can be minimized by using low ESR capacitors for the bootstrap and the VLS capacitors. 18. A small internal charge pump will supply up to 30 µA nominal to compensate for leakage on the high-side FET gate output and maintain voltages after bootstrap events. It is not intended for external components to be connected to the High-Side FET gate, but small amounts of additional leakage can be accommodated. Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 8.0V ≤ V PWR =VBAT ≤ 40V, -40°C ≤ T A ≤ 125°C, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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