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TPCF8301 Datasheet(PDF) 5 Page - Toshiba Semiconductor

No. de pieza TPCF8301
Descripción Electrónicos  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCF8301 Datasheet(HTML) 5 Page - Toshiba Semiconductor

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TPCF8301
2006-11-16
5
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain-source voltage VDS (V)
IDR – VDS
Drain-source voltage VDS (V)
Capacitance – VDS
Ambient temperature Ta (°C)
Vth – Ta
Ambient temperature Ta (°C)
PD – Ta
Total gate charge Qg (nC)
Dynamic input/output characteristics
10
−0.1
−1
−10
−100
100
1000
10000
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25°C
−0.0
−80
−40
0
40
80
120
160
−0.5
−1.0
−1.5
−2.0
Common source
VDS = −10 V
ID = −200 μA
Pulse test
0
0
40
80
120
160
0.4
0.8
1.2
1.6
2
(4)
(1)
(3)
(2)
Device mounted on a glass-epoxy
board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation (Note 3b)
Device mounted on a glass-epoxy
board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t
= 5 s
−1
0
−10
−100
0.4
0.8
1.2
1.6
2.0
Common source
Ta
= 25°C
Pulse test
VGS = 0 V
−1
−1.8
−4.5
−2.5
0
0
−2
−4
−6
−8
−10
−4
−8
−12
−16
−20
0
−2
−4
−6
−8
−10
VDS
−4 V
−8 V
VDD = −16 V
VGS
Common source
ID = −2.7 A
Ta
= 25°C
Pulse test
0
−80
−40
0
40
80
120
160
50
100
150
200
250
300
Common source
Pulse test
VGS = −1.8 V
−2.5 V
−4.5 V
ID = −0.7, −1.4, −2.7 A
−0.7 A
ID = −2.7 A
ID = −1.4 A
−0.7 A
ID = −1.4 A


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