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TPCP8J01 Datasheet(PDF) 2 Page - Toshiba Semiconductor

No. de pieza TPCP8J01
Descripción Electrónicos  TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCP8J01 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TPCP8J01
2006-11-17
2
Common Absolute Maximum Ratings (Ta=25°C )
Characteristics
Symbol
Rating
Unit
Junction temperature
TJ
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
= 5 s)
(Note 2a)
Rth (ch-a)
58.4
°C/W
Thermal resistance, channel to ambient
(t
= 5 s)
(Note 2b)
Rth (ch-a)
117.9
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −3.0 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: “
•“ on the lower left of the marking indicates Pin 1.
Week of manufacture
Year of manufacture
(01 for the first week of the year, continues up to 52 or 53)
(The last digit of the calendar year)
Weekly code (three digits):
FR-4
25.4
× 25.4 × 0.8
Unit: mm)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(a)
(b)


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