TPCP8001-H datasheet(5/7 Pages) TOSHIBA

No. de pieza	TPCP8001-H

Descripción Electrónicos	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

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5 / 7 page

TPCP8001-H

2006-05-29

5

Total gate charge Qg (nC)

40

20

30

0

16

4

16

12

0

8

12

4

10

8

50

20

VDD = 6 V

VDS

24 V

12 V

2

1.2

0

50

100

150

1.6

200

0.8

0.4

(1)

(2)

0

0.5

1.5

−80

−40

0

40

80

120

160

1.0

2.5

2.0

10

0.1

100

1000

10000

1

10

100

Ciss

Coss

Crss

0

1

−0.2

10

100

−0.6

−0.8

−1.0

−0.4

10

3

1

VGS = 0 V

4.5

−1.2

160

−40

0

40

80

120

−80

35

25

20

10

0

40

VGS = 4.5 V

10 V

ID = 1.8,3.6,7.2 A

5

30

15

ID = 1.8,3.6,7.2 A

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain-source voltage VDS (V)

IDR – VDS

Drain-source voltage VDS (V)

Capacitance – VDS

Ambient temperature Ta (°C)

Vth – Ta

Ambient temperature Ta (°C)

PD – Ta

Dynamic input/output

characteristics

(1)Device mounted on a glass-epoxy

board (a) (Note 2a)

(2)Device mounted on a glass-epoxy

board (b) (Note 2b)

ｔ＝

5s

Common source

Ta

= 25°C

Pulse test

Common source

Pulse test

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

Common source

VDS = 10 V

ID = 1 mA

Pulse test

Common source

ID = 7.2 A

Ta

= 25°C

Pulse test

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TPCP8001-H Datasheet(PDF) 5 Page - Toshiba Semiconductor

TPCP8001-H Datasheet(HTML) 5 Page - Toshiba Semiconductor

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