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TPCP8001-H Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPCP8001-H Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPCP8001-H 2006-05-29 5 Total gate charge Qg (nC) 40 20 20 30 0 0 16 4 16 12 0 8 12 4 10 8 50 20 VDD = 6 V VDS 24 V 12 V 2 1.2 0 0 50 100 150 1.6 200 0.8 0.4 (1) (2) 0 0.5 1.5 −80 −40 0 40 80 120 160 1.0 2.5 2.0 10 0.1 100 1000 10000 1 10 100 Ciss Coss Crss 0 1 −0.2 10 100 −0.6 −0.8 −1.0 −0.4 10 3 1 VGS = 0 V 4.5 −1.2 160 −40 0 40 80 120 −80 35 25 20 10 0 40 VGS = 4.5 V 10 V ID = 1.8,3.6,7.2 A 5 30 15 ID = 1.8,3.6,7.2 A Ambient temperature Ta (°C) RDS (ON) – Ta Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Ambient temperature Ta (°C) Vth – Ta Ambient temperature Ta (°C) PD – Ta Dynamic input/output characteristics (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) t= 5s Common source Ta = 25°C Pulse test Common source Pulse test Common source VGS = 0 V f = 1 MHz Ta = 25°C Common source VDS = 10 V ID = 1 mA Pulse test Common source ID = 7.2 A Ta = 25°C Pulse test |
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