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TPCP8501 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPCP8501 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page TPCP8501 2006-11-13 3 0.001 1 10 1000 100 0.01 0.1 Ta = 100°C −55 25 0.001 0.1 10 10 1 0.01 0.1 Ta = −55°C 100°C 25°C 0.001 0.01 1 1 0.1 0.01 0.1 Ta = 100°C −55°C 25°C 0 0 0.2 1.0 1.2 1.6 2.0 −55 Ta = 100°C 25 Collector −emitter voltage VCE (V) IC – VCE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Collector current IC (A) VBE (sat) – IC Base −emitter voltage VBE (V) IC – VBE 0 0 2 4 5 6 0.4 1.6 2.0 Common emitter Ta = 25°C Single nonrepetitive pulse 8 6 16 IB = 2 mA 20 10 14 4 1.2 0.8 3 1 0.4 1.2 0.8 0.8 0.4 0.6 Common emitter VCE = 2 V Single nonrepetitive pulse Common emitter β = 30 Single nonrepetitive pulse Common emitter β = 30 Single nonrepetitive pulse Common emitter VCE = 2 V Single nonrepetitive pulse 10 10 1 Ambient temperature Ta (°C) Pc – Ta 0.2 1.4 0 160 0.4 0.8 1.0 20 80 100 0 40 120 60 140 0.6 1.2 Mounted on an FR4 board glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) |
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