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TPCS8212 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPCS8212 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 7 page  TPCS8212 2007-01-16 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 200 μA 0.5 ⎯ 1.2 V VGS = 2.0 V, ID = 4.2 A ⎯ 26 45 VGS = 2.5 V, ID = 4.2 A ⎯ 21 29 Drain-source ON resistance RDS (ON) VGS = 4.0 V, ID = 4.8 A ⎯ 16 24 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 3.0 A 5.5 11 ⎯ S Input capacitance Ciss ⎯ 1590 ⎯ Reverse transfer capacitance Crss ⎯ 180 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 200 ⎯ pF Rise time tr ⎯ 6.4 ⎯ Turn-ON time ton ⎯ 22 ⎯ Fall time tf ⎯ 10 ⎯ Switching time Turn-OFF time toff Duty <= 1%, tw = 10 μs ⎯ 42 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 20 ⎯ Gate-source charge 1 Qgs1 ⎯ 3.5 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− 16 V, VGS = 5 V, ID = 6 A ⎯ 4.5 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 24 A Forward voltage (diode) VDSF IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ∼− 10 V 0 V VGS 5 V ID = 3 A VOUT |
Número de pieza similar - TPCS8212_07 |
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Descripción similar - TPCS8212_07 |
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