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2SC4247 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC4247 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SC4247 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4247 TV Tuner, UHF Oscillator Applications (common collector) • Transition frequency is high and dependent on current excellently. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 2 V, IC = 0 ⎯ ⎯ 1.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = 1 mA, IB = 0 12 ⎯ ⎯ V DC current gain hFE VCE = 10 V, IC = 5 mA 35 ⎯ 130 Transition frequency fT VCE = 10 V, IC = 10 mA 2.6 4 ⎯ GHz Output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 1.05 1.35 pF Collector-base time constant Cc・rbb’ VCB = 10 V, IC = 5 mA, f = 30 MHz ⎯ 4.5 9.0 ps Marking Unit: mm JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) |
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