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2SC2655 Datasheet(PDF) 3 Page - Toshiba Semiconductor

No. de pieza 2SC2655
Descripción Electrónicos  Silicon NPN Epitaxial Type (PCT Process)
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC2655 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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2SC2655
2006-11-09
3
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
VCE – IC
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
hFE – IC
Collector current IC (A)
VCE – IC
Collector current IC (A)
VCE – IC
10
0.01
100
0.03
0.1
1
Common emitter
VCE = 2 V
Ta = 100°C
25
−55
50
300
500
1000
30
0.3
Common emitter
IC/IB = 20
0.02
0.01
0.1
0.03
0.1
0.3
1
Ta = 100°C
25
−55
0.05
0.3
0.5
1
0.6
0
0
0.4
0.8
1.2
2.0
2.4
1.6
0.2
0.4
0.8
1.0
Common emitter
Ta = 25°C
20
IB = 5 mA
40
10
30
0.6
0
0
0.4
0.8
1.2
2.0
2.4
1.6
0.2
0.4
0.8
1.0
Common emitter
Ta = 100°C
20
IB = 5 mA
40
10
30
0.6
0
0
0.4
0.8
1.2
2.0
2.4
1.6
0.2
0.4
0.8
1.0
Common emitter
Ta = −55°C
20
50
IB = 5 mA
40
10
30
4
6
8
10
2
12
14
0
2.4
1.6
1.2
0.8
0.4
0
8
0
10
IB = 2 mA
12
4
6
15
Common emitter
Ta = 25°C
2.0
18
25
20


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