2SJ201_07 datasheet(2/5 Pages) TOSHIBA

No. de pieza	2SJ201

Descripción Electrónicos	High-Power Amplifier Application

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

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2 / 5 page

2SJ201

2006-11-16

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain cut−off current

IDSS

VDS = −200 V, VGS = 0

―

−1.0

mA

Gate leakage current

IGSS

VDS = 0, VGS = ±20 V

―

±0.5

μA

Drain−source breakdown voltage

V (BR) DSS

ID = −10 mA, VGS = 0

−200

―

V

Gate−source cut−off voltage

(Note 2)

VGS (OFF)

VDS = −10 V, ID = −0.1 A

−0.8

―

−2.8

V

Drain−source saturation voltage

VDS (ON)

ID = −8 A, VGS = −10 V

―

−2.0

−5.0

V

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −5 A

―

5.0

―

S

Input capacitance

Ciss

VDS = −30 V, VGS = 0, f = 1 MHz

―

1500

―

Output capacitance

Coss

VDS = −30 V, VGS = 0, f = 1 MHz

―

430

―

Reverse transfer capacitance

Crss

VDS = −30 V, VGS = 0, f = 1 MHz

―

230

―

pF

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VGS (OFF) Classification

O: −0.8~−1.6,

Y: −1.4~−2.8

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Marking

2SJ201

TOSHIBA

JAPAN

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

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