Si3460

4

Preliminary Rev. 0.4

2. Si3460-EVB Application Diagram

Figure 2. Si3460-EVB Application Diagram

2.1. Si3460-EVB Performance Characteristics

When implemented according to the recommended external components and layout guidelines for the Si3460-

EVB, the Si3460 enables the following performance specifications in single-port PSE applications. Please refer to

the Si3460-EVB User’s Guide and schematics for details.

Table 1. Selected Electrical Specifications (Si3460-EVB)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Power Supplies

–40 to +85 °C ambient range

11

12, 15

16

V

UVLO

10

—

—

V

VDD supply voltage range

Si3460 supply voltage range

2.7

3.3

3.6

V

VDD UVLO voltage

Si3460 UVLO turn-off voltage

2.7

—

—

V

Output supply voltage

PSE output voltage at

–54

–50

–46

V

Supply current

(including gate drive and detect)

—5—

mA

Detection Specifications

Minimum signature resistance

15

17

19

k

Ω

Maximum signature resistance

26.5

29

33

k

Ω

Classification Specifications

Classification voltage

–20.5

—

–15.5

V

Classification current limit

Measured with 200

55

—

95

mA

Classification current region

Class 0

0

—

5

mA

Class 1

8

—

13

mA

Class 2

16

—

21

mA

Class 3

25

—

31

mA

Class 4

35

—

45

mA

Si3460

GND

DETA

+11V

to

16V

-48 V

PSE

output

(to port

magnetics)

RST

VDD

PWM

BOM

Detect

BOM

ISENSE

STATUS

250KHZ

CTRL1

GATE

VSENSE

DETECT

FAULT

PGOOD

CTRL2

Note: Refer to the Si3460-EVB User Guide for complete schematic details