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2SJ525 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SJ525 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 3 page 2SJ525 2006-11-16 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = −30 V, VGS = 0 V — — −100 μA Drain−source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 V −30 — — V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 — −2.0 V VGS = −4 V, ID = −2.5 A — 0.17 0.2 Drain−source ON resistance RDS (ON) VGS = −10 V, ID = −2.5 A — 0.1 0.12 Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.5 A 2.0 4.5 — S Input capacitance Ciss — 850 — Reverse transfer capacitance Crss — 250 — Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz — 330 — pF Rise time tr — 50 — Turn−on time ton — 75 — Fall time tf — 20 — Switching time Turn−off time toff — 95 — ns Total gate charge (Gate−source plus gate−drain) Qg — 27 — Gate−source charge Qgs — 19 — Gate−drain (“miller”) charge Qgd VDD ≈ −24 V, VGS = −10 V, ID = −5 A — 8 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — −5 A Pulse drain reverse current (Note 1) IDRP — — — −20 A Forward voltage (diode) VDSF IDR = −5 A, VGS = 0 V — — 1.7 V Reverse recovery time trr — 60 — ns Reverse recovery charge Qrr IDR = −5 A, VGS = 0 V dIDR / dt = 50 A / μs — 56 — nC Marking J525 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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