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2SK3130 Datasheet(PDF) 3 Page - Toshiba Semiconductor

No. de pieza 2SK3130
Descripción Electrónicos  Silicon N Channel MOS Type
Download  6 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3130 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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2SK3130
2006-11-08
3
Drain-source voltage VDS (V)
ID – VDS
Drain-source voltage VDS (V)
ID – VDS
Gate-source voltage VGS (V)
ID – VGS
Gate-source voltage VGS (V)
VDS – VGS
Drain current ID (A)
|Yfs| – ID
Drain current ID (A)
RDS (ON) – ID
0
VGS = 5.0 V
15
0
2
4
6
8
10
1
2
3
4
5
Common source
Tc
= 25°C
Pulse test
10
6
5.8
5.6
5.4
5.2
0
VGS = 5.0 V
0
10
20
30
40
50
2
4
6
8
10
15
Common source
Tc
= 25°C
Pulse test
10
6.4
6.2
6.0
5.8
5.4
0
0
2
4
6
8
10
2
4
6
8
10
Common source
VDS = 20 V
Pulse test
100
Tc
= 25°C
0.1
0.1
1
100
1
100
10
10
Common source
VDS = 20 V
Pulse test
Tc
= 25°C
100
1
0.1
1
10
10
100
VGS = 10, 15 V
Common source
Tc
= 25°C
Pulse test
16
0
4
8
12
20
1.5
3
04
8
16
12
20
Common source
Tc
= 25°C
Pulse test
ID = 6 A


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