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2SK3387 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3387 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3387 2006-11-20 4 0 4 8 12 16 0 0 40 80 120 160 20 40 60 VDD = 120 V VDS VGS 30 60 Common source ID = 18 A Tc = 25°C Pulse test Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Vth – Tc Case temperature Tc (°C) PD – Tc Total gate charge Qg (nC) Dynamic input/output characteristics −40 0 40 80 120 160 −80 200 Common source Pulse test 160 120 80 40 0 ID = 18 A 4.5 9 VGS = 10 V 150 100 0 0 40 80 120 160 50 1 3 5 10 30 50 100 0 Common source Tc = 25°C Pulse test −0.4 −0.8 −1.2 −1.6 VGS = 0, −1 V 10 5 3 1 10 0.1 30 50 100 300 500 1000 3000 5000 0.3 0.5 1 3 5 10 30 50 100 Common source VGS = 0 V f = 1 MHz Tc = 25°C Pulse test Ciss Coss Crss 0 1 2 3 4 −80 −40 0 40 80 120 160 Common source VDS = 10 V ID = 1 mA Pulse test |
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