TC74HC03AFN datasheet(4/8 Pages) TOSHIBA

No. de pieza	TC74HC03AFN

Descripción Electrónicos	CMOS Digital Integrated Circuit Silicon Monolithic Quad 2-Input NAND Gate (open drain)

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

Página de inicio	http://www.semicon.toshiba.co.jp/eng

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4 / 8 page

TC74HC03AP/AF/AFN

2007-10-01

4

AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns)

Test Condition

Ta

= 25°C

Ta

= −40~85°C

Characteristics

Symbol

VCC

(V)

Min

Typ.

Max

Min

Max

Unit

Output transition time

tTHL

⎯

2.0

4.5

6.0

⎯

30

8

7

75

15

13

⎯

95

19

16

ns

Propagation delay

time

tpLZ

RL = 1 kΩ

2.0

4.5

6.0

⎯

20

10

9

75

15

13

⎯

95

19

16

ns

Propagation delay

time

tpZL

RL = 1 kΩ

2.0

4.5

6.0

⎯

24

8

7

75

15

13

⎯

95

19

16

ns

Input capacitance

CIN

⎯

5

10

⎯

10

pF

Output capacitance

COUT

⎯

3

⎯

pF

Power dissipation

capacitance

CPD

(Note)

⎯

5

⎯

pF

Note:

CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating

current consumption without load.

Average operating current can be obtained by the equation:

ICC (opr) = CPD･VCC･fIN + ICC/4 (per gate)

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TC74HC03AFN Datasheet(PDF) 4 Page - Toshiba Semiconductor

TC74HC03AFN Datasheet(HTML) 4 Page - Toshiba Semiconductor

Número de pieza similar - TC74HC03AFN

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