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TC74HC85AFN Datasheet(PDF) 5 Page - Toshiba Semiconductor

No. de pieza TC74HC85AFN
Descripción Electrónicos  CMOS Digital Integrated Circuit Silicon Monolithic 4-Bit Magnitude Comparator
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC74HC85AFN Datasheet(HTML) 5 Page - Toshiba Semiconductor

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TC74HC85AP/AF/AFN
2007-10-01
5
AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C, input: tr = tf = 6 ns)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Output transition time
tTLH
tTHL
4
8
ns
Propagation delay time
(A, B-OUT)
tpLH
tpHL
22
34
ns
Propagation delay time
(CASCADE-OUT)
tpLH
tpHL
10
18
ns
AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns)
Test Condition
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
VCC
(V)
Min
Typ.
Max
Min
Max
Unit
Output transition time
tTLH
tTHL
2.0
4.5
6.0
30
8
7
75
15
13
95
19
16
ns
Propagation delay
time
(A, B-OUT)
tpLH
tpHL
2.0
4.5
6.0
90
26
22
195
39
33
245
49
42
ns
Propagation delay
time
(CASCADE-OUT)
tpLH
tpHL
2.0
4.5
6.0
40
13
11
110
22
19
140
28
24
ns
Input capacitance
CIN
5
10
10
pF
Power dissipation
capacitance
CPD
(Note)
25
pF
Note:
CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD・VCC・fIN + ICC


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