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2SA1314 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SA1314 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SA1314 2006-11-09 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1314 Strobe Flash Applications Audio Power Applications • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = -1 V, IC = −4 A) • Low saturation voltage : VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −50 mA) • Small package • Complementary to 2SC2982 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −10 V Emitter-base voltage VEBO −6 V DC IC −2 Collector current Pulsed (Note 1) ICP −4 A Base current IB −2 A PC 500 Collector power dissipation PC (Note 2) 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Pulse test: pulse width = 10 mS (max), duty cycle = 30% (max) Note 2: Mounted on a ceramic substrate (250 mm 2 × 0.8 t) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) |
Número de pieza similar - 2SA1314_07 |
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Descripción similar - 2SA1314_07 |
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