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TC75S57FU Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TC75S57FU Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 9 page TC75S57F/FU/FE 2007-11-01 5 Sink current Isink (mA) VOL – Isink 0.0 0 3.0 2.0 1.0 10 20 30 40 VDD = 3 V VSS = GND Ta = 25°C 0.5 1.5 2.5 5 15 25 35 3.0 Source current Isource (mA) VOH – Isource 5.0 0.0 4.0 VDD = 5 V VSS = GND Ta = 25°C 0.5 1.0 1.5 2.0 2.5 3.5 4.5 0 10 20 30 40 5 15 25 35 Source current Isource (mA) VOH – Isource 0.0 0 3.0 2.0 1.0 10 20 30 40 VDD = 3 V VSS = GND Ta = 25°C 0.5 1.5 2.5 5 15 25 35 3.0 Sink current Isink (mA) VOL – Isink 5.0 0.0 4.0 VDD = 5 V VSS = GND Ta = 25°C 0.5 1.0 1.5 2.0 2.5 3.5 4.5 0 10 20 30 40 5 15 25 35 PD – Ta 300 Ambient temperature Ta (°C) 200 100 0 −40 0 40 80 120 This data was obtained from an unmounted standalone IC. If the IC is mounted on a PCB, its power dissipation will be greater. Note that, depending on the PCB’s thermal characteristics, the curves may differ substantially from those shown. |
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