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TD62064AFG Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TD62064AFG Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 11 page TD62064APG/AFG 2007-10-16 3 Operating Conditions (Ta = −40 to 85°C) Characteristics Symbol Test Condition Min Typ. Max Unit Output sustaining voltage VCE (SUS) ⎯ 0 ⎯ 50 V DC1 circuit, Ta = 25°C 0 ⎯ 1250 Duty = 10% 0 ⎯ 1250 APG (Note 1) Duty = 50% 0 ⎯ 390 Duty = 10% 0 ⎯ 907 Output current AFG (Note 2) IOUT Tpw = 25 ms 4 circuits Tj = 120°C Ta = 85°C Duty = 50% 0 ⎯ 172 mA/ch VIN ⎯ 0 ⎯ 8 Output ON VIN (ON) IOUT = 1.25 A 2.5 ⎯ 8 Input voltage Output OFF VIN (OFF) ⎯ 0 ⎯ 0.4 V Input current IIN ⎯ 0 ⎯ 20 mA Clamp diode reverse voltage VR ⎯ 0 ⎯ 50 V Clamp diode forward current IF ⎯ ⎯ ⎯ 1.25 A APG Ta = 85°C (Note 1) ⎯ ⎯ 1.4 Power dissipation AFG PD Ta = 85°C (Note 2) ⎯ ⎯ 0.7 W Note 1: On glass epoxy PCB (50 × 50 × 1.6 mm Cu 50%) Note 2: On glass epoxy PCB (60 × 30 × 1.6 mm Cu 30%) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit VCE = 50 V, Ta = 25°C ⎯ ⎯ 50 Output leakage current ICEX 1 VCE = 50 V, Ta = 85°C ⎯ ⎯ 500 μA IOUT = 1.25 A, IIN = 2 mA ⎯ ⎯ 1.6 Output saturation voltage VCE (sat) 2 IOUT = 0.75 A, IIN = 935 μA ⎯ ⎯ 1.25 V IOUT = 1.0 A ⎯ 800 ⎯ DC current transfer ratio hFE 2 VCE = 2 V IOUT = 0.25 A ⎯ 1500 ⎯ ⎯ Input voltage (output on) VIN (ON) 3 IOUT = 1.25 A, IIN = 2 mA ⎯ ⎯ 2.4 V VR = 50 V, Ta = 25°C ⎯ ⎯ 50 Clamp diode leakage current IR 4 VR = 50 V, Ta = 85°C ⎯ ⎯ 100 μA Clamp diode forward voltage VF 5 IF = 1.25 A ⎯ ⎯ 2.0 V Input capacitance CIN 6 VIN = 0 V, f = 1 MHz ⎯ 15 ⎯ pF Turn-ON delay tON 7 CL = 15 pF, VOUT = 50 V, RL = 42 Ω ⎯ 0.1 ⎯ μs Turn-OFF delay tOFF 7 CL = 15 pF, VOUT = 50 V, RL = 42 Ω ⎯ 1.0 ⎯ μs |
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