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TS34119 Datasheet(PDF) 6 Page - Taiwan Semiconductor Company, Ltd |
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TS34119 Datasheet(HTML) 6 Page - Taiwan Semiconductor Company, Ltd |
6 / 13 page TS34119 Low Power Audio Amplifier 6/13 Version: A07 Design Guideline POWER DISSIPATION Figure 8 to 10 indicate the device dissipation (within the IC) for various combinations of VCC, RL, and load power. The maximum power which can safely be dissipated within the TS34119 is found from the following equation: PD= (140oC - Ta) / Өja Where Ta is the ambient temperature; and Өja is the package thermal resistance (100 oC/W for the standard DIP package, and 180 oC/W for the surface mount package.) The power dissipated within the TS34119, in a given application, it is found from the following equation: PD= (VCC × ICC) + (IRMS × VCC) - (RL × IRMS2) Where ICC is obtained from Figure 15; and IRMS is the RMS current at the load; and RL is load resistance. Figure 8 to 10, along with Figure 11 to 13 (distortion curves), and a peak working load current of ±200mA, define the operating range for the TS34119. The operating range is further defined in terms of allowable load power in Figure 14 for loads of 8Ω, 16Ω and 32Ω. The left (ascending) portion of each of the three curves is defined by the power level at which 10% distortion occurs. The center flat portion of each curve is defined by the maximum output current capability of the TS34119. The right (descending) portion of each curve is defined by the maximum internal power dissipation of the IC at 25 oC. At higher ambient temperatures, the maximum load power must be reduced according to the above equations. Operating the device beyond the current and junction temperature limits will degrade long-term reliability. Electrical Characteristics Curve Figure 1. Turn-On Time vs. C2, C2 at Power-On Figure 2. Amplifier #1 Open Loop Gain and Phase Figure 3. Differential Gain vs. Frequency Figure 4. PSRR vs. Frequency (C2=10uF) |
Número de pieza similar - TS34119_07 |
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Descripción similar - TS34119_07 |
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