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TSD882 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSD882 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page TSD882 Low Vcesat NPN Transistor 1/4 Version: A07 TO-126 PRODUCT SUMMARY BVCBO 50V BVCEO 50V IC 3A VCE(SAT) 0.5V @ IC / IB = 2A / 200mA Features ● Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) ● Complementary part with TSB772 Structure ● Epitaxial Planar Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TSD882CK B0 TO-126 1Kpcs / Bulk Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V DC 3 Collector Current Pulse IC 7 (note) A SOT-89 0.75 Collector Power Dissipation TO-92 PD 0.625 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: Single pulse, Pw≤350us, Duty≤2% Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 50uA, IE = 0 BVCBO 60 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 50 -- -- V Emitter-Base Breakdown Voltage IE = 50uA, IC = 0 BVEBO 5 -- -- V Collector Cutoff Current VCB = 50V, IE = 0 ICBO -- -- 1 uA Emitter Cutoff Current VEB = 3V, IC = 0 IEBO -- -- 1 uA Collector-Emitter Saturation Voltage IC / IB = 2A / 200mA *VCE(SAT) -- 0.25 0.5 V Base-Emitter Saturation Voltage IC / IB = 2A / 200mA *VBE(SAT) -- -- 2 V DC Current Transfer Ratio VCE = 2V, IC = 1A *hFE 100 -- 500 Transition Frequency VCE =6V, IC=50mA, f=100MHz fT -- 90 -- MHz Output Capacitance VCB = 10V, f=1MHz Cob -- 45 -- pF * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% Pin Definition: 1. Emitter 2. Collector 3. Base |
Número de pieza similar - TSD882_07 |
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Descripción similar - TSD882_07 |
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