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TPS2147IDGQR Datasheet(PDF) 5 Page - Texas Instruments

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No. de pieza TPS2147IDGQR
Descripción Electrónicos  LDO AND DUAL SWITCH WITH CONTROLLED RISE TIMES FOR DSP AND PORTABLE APPLICATIONS
Download  34 Pages
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Fabricante Electrónico  TI [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI - Texas Instruments

TPS2147IDGQR Datasheet(HTML) 5 Page - Texas Instruments

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TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 − AUGUST 2001
5
www.ti.com
electrical characteristics over recommended operating junction-temperature range,
2.9 V
≤ VI(VIN/SWIN1) ≤ 5.5 V, 2.9 V ≤ VI(SWIN2) ≤ 5.5 V, VI(ENx) = 0 V or VI(ENx) = 5 V,
VI(LDO_EN) = 5 V, TJ = −40°C to 100°C (unless otherwise noted) (continued)
undervoltage lockout at SWIN2
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
UVLO Threshold
2.2
2.85
V
Hysteresis (see Note 1)
260
mV
Deglitch (see Note 1)
50
µs
NOTE 1. Specified by design, not tested in production.
electrical characteristics over recommended operating junction-temperature range,
2.9 V
≤ VI(VIN/SWIN1) ≤ 5.5 V, 2.9 V ≤ VI(SWIN2) ≤ 5.5 V, VI(ENx) = 0 V or VI(ENx) = 5 V,
VI(LDO_EN) = 5 V, CL(LDO_OUT) = 10 µF, TJ = −40°C to 100°C (unless otherwise noted)
fixed-voltage regulator, 3.3 V
PARAMETER
TEST CONDITIONS†
MIN
TYP
MAX
UNIT
VO
Output voltage, dc
VI(VIN/SWIN1) = 4.25 V to 5.25 V,
IO(LDO_OUT) = 0.5 mA to 200 mA
3.20
3.3
3.40
V
Dropout voltage
VI(VIN/SWIN1) = 3.2 V,
IO(LDO_OUT) = 200 mA,
0.35
V
Dropout voltage
I(VIN/SWIN1)
IO(LDO_OUT) = 200 mA,
IO(OUT1) = 150 mA
0.35
V
Line regulation voltage (see Note 1)
VI(VIN/SWIN1) = 4.25 V to 5.25 V,
IO(LDO_OUT) = 5 mA
0.1
%/V
Load regulation voltage (see Note 1)
VI(VIN/SWIN1) = 4.25 V,
IO(LDO_OUT) = 5 mA to 200 mA
0.4%
1.15%
IOS
Short-circuit current limit
VI(VIN/SWIN1) = 4.25 V,
LDO_OUT connected to GND
0.275
0.33
0.55
A
Ilkg(R)
Reverse leakage current into
LDO_OUT
VO(LDO_OUT) = 3.3 V,
VI(VIN/SWIN1) = 0 V,
VI(LDO_EN) = 0 V
10
µA
Ilkg(R)
Reverse leakage current into
LDO_OUT
VO(LDO_OUT) = 5.5 V,
VI(VIN/SWIN1) = 2.9 V,
VI(LDO_EN) = 0 V
10
µA
ton
Turnoff time, LDO_EN
transitioning low (see Note 1)
RL = 16 Ω, CL(LDO_OUT) = 10 µF
0.25
1
ms
toff
Turnon time, LDO_EN
transitioning high (see Note 1)
RL = 16 Ω, CL(LDO_OUT) = 10 µF
0.1
1
ms
Ramp-up time, LDO_OUT (0% to 90%)
VI(LDO_EN) = 5 V, VIN/SWIN1 ramping up from 10%
to 90% in 0.1 ms, RL = 16 Ω,
CL(LDO_OUT) = 10 µF
0.1
1
ms
Power supply rejection
f = 1 kHz, CL(LDO_OUT) = 4.7 µF,
ESR = 0.25
Ω, IO = 5 mA,
VI(VIN/SWIN1)p−p = 100 mV
50
dB
† Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
NOTE 1. Specified by design, not tested in production.


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