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TPS2147IDGQR Datasheet(PDF) 5 Page - Texas Instruments |
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TPS2147IDGQR Datasheet(HTML) 5 Page - Texas Instruments |
5 / 34 page TPS2145, TPS2147 TPS2155, TPS2157 SLVS333 − AUGUST 2001 5 www.ti.com electrical characteristics over recommended operating junction-temperature range, 2.9 V ≤ VI(VIN/SWIN1) ≤ 5.5 V, 2.9 V ≤ VI(SWIN2) ≤ 5.5 V, VI(ENx) = 0 V or VI(ENx) = 5 V, VI(LDO_EN) = 5 V, TJ = −40°C to 100°C (unless otherwise noted) (continued) undervoltage lockout at SWIN2 PARAMETER TEST CONDITIONS MIN TYP MAX UNIT UVLO Threshold 2.2 2.85 V Hysteresis (see Note 1) 260 mV Deglitch (see Note 1) 50 µs NOTE 1. Specified by design, not tested in production. electrical characteristics over recommended operating junction-temperature range, 2.9 V ≤ VI(VIN/SWIN1) ≤ 5.5 V, 2.9 V ≤ VI(SWIN2) ≤ 5.5 V, VI(ENx) = 0 V or VI(ENx) = 5 V, VI(LDO_EN) = 5 V, CL(LDO_OUT) = 10 µF, TJ = −40°C to 100°C (unless otherwise noted) fixed-voltage regulator, 3.3 V PARAMETER TEST CONDITIONS† MIN TYP MAX UNIT VO Output voltage, dc VI(VIN/SWIN1) = 4.25 V to 5.25 V, IO(LDO_OUT) = 0.5 mA to 200 mA 3.20 3.3 3.40 V Dropout voltage VI(VIN/SWIN1) = 3.2 V, IO(LDO_OUT) = 200 mA, 0.35 V Dropout voltage I(VIN/SWIN1) IO(LDO_OUT) = 200 mA, IO(OUT1) = 150 mA 0.35 V Line regulation voltage (see Note 1) VI(VIN/SWIN1) = 4.25 V to 5.25 V, IO(LDO_OUT) = 5 mA 0.1 %/V Load regulation voltage (see Note 1) VI(VIN/SWIN1) = 4.25 V, IO(LDO_OUT) = 5 mA to 200 mA 0.4% 1.15% IOS Short-circuit current limit VI(VIN/SWIN1) = 4.25 V, LDO_OUT connected to GND 0.275 0.33 0.55 A Ilkg(R) Reverse leakage current into LDO_OUT VO(LDO_OUT) = 3.3 V, VI(VIN/SWIN1) = 0 V, VI(LDO_EN) = 0 V 10 µA Ilkg(R) Reverse leakage current into LDO_OUT VO(LDO_OUT) = 5.5 V, VI(VIN/SWIN1) = 2.9 V, VI(LDO_EN) = 0 V 10 µA ton Turnoff time, LDO_EN transitioning low (see Note 1) RL = 16 Ω, CL(LDO_OUT) = 10 µF 0.25 1 ms toff Turnon time, LDO_EN transitioning high (see Note 1) RL = 16 Ω, CL(LDO_OUT) = 10 µF 0.1 1 ms Ramp-up time, LDO_OUT (0% to 90%) VI(LDO_EN) = 5 V, VIN/SWIN1 ramping up from 10% to 90% in 0.1 ms, RL = 16 Ω, CL(LDO_OUT) = 10 µF 0.1 1 ms Power supply rejection f = 1 kHz, CL(LDO_OUT) = 4.7 µF, ESR = 0.25 Ω, IO = 5 mA, VI(VIN/SWIN1)p−p = 100 mV 50 dB † Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. NOTE 1. Specified by design, not tested in production. |
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