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ST1S09 Datasheet(PDF) 6 Page - STMicroelectronics |
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ST1S09 Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 18 page Electrical characteristics ST1S09 6/18 4 Electrical characteristics Note: 1 Guaranteed by design, but not tested in production. Table 6. Electrical characteristics for ST1S09PU Refer to Figure 21. application circuit VIN_SW = VIN_A = 5V, VO = 1.2V, C1 = 4.7µF, C2 = 22µF, L1 = 2.7µH, TJ = -30 to 125°C (unless otherwise specified. Typical values are referred to 25°C) Symbol Parameter Test conditions Min. Typ. Max. Unit FB Feedback voltage 784 800 816 mV IFB VFB pin bias current 600 nA VI Input voltage IO = 10mA to 2A 4.5 5.5 V UVLO Under voltage lock out threshold VI Rising 3.5 3.7 3.9 V Hysteresis 150 mV OVP Over voltage protection threshold VO rising 1.05 VO 1.1 VO V Over voltage protection hysteresis VO falling 5 % IOVP Overvoltage clamping current VO = 1.2V 300 mA IQ Quiescent current Not switching 1.5 2.5 mA IO Output current VI = 4.5 to 5.5V Note: 1 2A %VO/ΔVI Output line regulation VI = 4.5V to 5.5V, IO = 100mA Note: 1 0.16 %VO/ ΔVI %VO/ΔIO Output load regulation IO = 10mA to 2A Note: 1 0.2 0.6 % PWMfS PWM switching frequency VFB = 0.65V 1.2 1.5 1.8 MHz DMAX Maximum duty cycle 80 87 % Power good output threshold 0.92 VO V Power good output voltage low ISINK = 6mA open drain output 0.4 V RDSON-N NMOS switch on resistance ISW = 750 mA 0.1 Ω RDSON-P PMOS switch on resistance ISW = 750 mA 0.1 Ω ISWL Switching current limitation Note: 1 2.5 2.9 3.5 A ν Efficiency Note: 1 IO = 10mA to 100mA, VO = 3.3V 65 % IO = 100mA to 2A, VO = 3.3V 82 87 TSHDN Thermal shutdown 150 °C THYS Thermal shutdown hysteresis 20 °C %VO/ΔIO Load transient response IO = 100mA to 1A, TA = 25°C tR = tF ≥ 200ns, Note: 1 -10 +10 %VO %VO/ΔIO Short circuit removal response IO = 10mA to IO = short, TA = 25°C Note: 1 -10 +10 %VO |
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