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CB45000 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza CB45000
Descripción Electrónicos  HCMOS6 STANDARD CELLS
Download  16 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

CB45000 Datasheet(HTML) 3 Page - STMicroelectronics

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CB45000 SERIES
®
TECHNOLOGY OVERVIEW
A major feature of the HCMOS6 process is
salicided active areas. This results in source
drain areas that are on the order of one to two
ohms resistance as opposed to the hundreds or
thousands of ohms of source drain resistance in
non-salicided
technologies.
This
very
low
resistance is one reason that very low transistor
widths could be utilized in the cell design since
drive is not lost due to source drain resistance.
This use of low width transistors results in lower
capacitance loading of the gates due to the
smaller areas utilized. Low resistance, low
capacitance, and small gates results in low power
usage for inverters as compared to previous
technologies.
The
reduction
in
power
consumption allows the usage of salicided active
stripes to distribute power internally to the simple
cell, replacing, in some cases, the usage of the
first metal layer. This saves silicon area by
allowing
greater
density,
permeability
and
routability of the cells resulting in greater overall
circuit density.
The other major feature of the HCMOS6 process
is five metal layer interconnect using CMP
(Chemical Mechanical Polishing) planarization.
The use of CMP for improved planarity between
metal
layers
allows
the
use
of
additional
interconnect layers without yield degradation,
improving density whilst retaining low costs.
The power distribution methodology provides
separate internal distributions to improve product
noise margin and reduce power loss. The three
supplies are:
s
Internal Vdd and Vss
Serves the core cells and the prebuffer sec-
tions of the I/O
s
External Vdd and Vss
Serves the output transistors only
s
Receiver Vdd and Vss
Serves the first stages of the receiver cells.
Optional distributions for 5.0V interface and other
standards can be utilized as necessary.


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