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BTA2008 Datasheet(PDF) 7 Page - NXP Semiconductors

No. de pieza BTA2008
Descripción Electrónicos  0.8 A Three-quadrant triacs high commutation
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Fabricante Electrónico  NXP [NXP Semiconductors]
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BTA2008_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 18 January 2008
7 of 12
NXP Semiconductors
BTA2008 series D and E
0.8 A Three-quadrant triacs high commutation
7.
Dynamic characteristics
Table 6.
Dynamic characteristics
Symbol Parameter
Conditions
BTA2008-600D
BTA2008-800D
BTA2008-600E
BTA2008-800E
Unit
Min
Typ
Max
Min
Typ
Max
dVD/dt
rate of rise of off-state
voltage
VDM = 0.67 × VDRM(max);
Tj = 125 °C; exponential
waveform; gate open circuit
200
-
-
600
-
-
V/
µs
dIcom/dt rate of change of
commutating current
VDM = 400 V; Tj = 125 °C;
IT(RMS) = 0.8 A;
dV/dt = 10 V/
µs; gate open
circuit
0.5
-
-
1.6
-
-
A/ms
tgt
gate-controlled turn-on time ITM = 1 A; VD =VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/µs
-2
-
-
2
-
µs
(1) T2
− G−
(2) T2+ G
(3) T2+ G+
Fig 7.
Normalized gate trigger voltage as a function
of junction temperature
Fig 8.
Normalized gate trigger current as a function
of junction temperature
Tj (°C)
−50
150
100
050
001aab101
0.8
1.2
1.6
0.4
VGT
VGT(25°C)
Tj (°C)
−50
150
100
050
001aac669
1
2
3
0
(1)
(2)
(3)
IGT
IGT(25°C)


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