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BYC10X-600 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BYC10X-600 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 10 page BYC10X-600_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 16 January 2008 3 of 10 NXP Semiconductors BYC10X-600 Rectifier diode, hyperfast 5. Thermal characteristics 6. Isolation characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; see Figure 1 - - 4.8 K/W without heatsink compound - - 5.9 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W Fig 1. Transient thermal impedance from junction to heatsink as a function of pulse width 001aaf257 10−2 10−1 1 10 Zth(j-h) (K/W) 10−3 tp (s) 10−6 10 1 10−1 10−5 10−3 10−2 10−4 tp tp T P t T δ = Table 5. Isolation limiting values and characteristics Th = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; f = 50 Hz to 60 Hz; sinusoidal waveform; relative humidity ≤ 65 %; clean and dust free - - 2500 V Cisol isolation capacitance from cathode to external heatsink; f = 1 MHz - 10 - pF |
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