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BUK7610-55AL Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK7610-55AL Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 13 page BUK7610-55AL_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 9 January 2008 8 of 13 NXP Semiconductors BUK7610-55AL N-channel TrenchMOS standard level FET Fig 10. Gate-source threshold voltage as a function of junction temperature Fig 11. Sub-threshold drain current as a function of gate-source voltage Fig 12. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature Tj (°C) −60 180 120 060 03aa32 2 3 1 4 5 VGS(th) (V) 0 max typ min 03aa35 VGS (V) 06 4 2 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max I D =1 mA; VDS = VGS T j =25 °C; VDS = VGS 003aaa730 6 10 14 18 5 101520 VGS (V) RDSon (m Ω) 03ne89 0 0.5 1 1.5 2 -60 0 60 120 180 Tj ( °C) a T j =25 °C; ID =25 A a = R DSon R DSon(25°C) |
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