BUK7610-55AL datasheet(8/13 Pages) PHILIPS

No. de pieza	BUK7610-55AL

Descripción Electrónicos	N-channel TrenchMOS standard level FET

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BUK7610-55AL_2

Product data sheet

Rev. 02 — 9 January 2008

8 of 13

NXP Semiconductors

BUK7610-55AL

N-channel TrenchMOS standard level FET

Fig 10. Gate-source threshold voltage as a function of

junction temperature

Fig 11. Sub-threshold drain current as a function of

gate-source voltage

Fig 12. Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 13. Normalized drain-source on-state resistance

factor as a function of junction temperature

Tj (°C)

−60

180

120

060

03aa32

2

3

1

4

5

VGS(th)

(V)

0

max

typ

min

03aa35

VGS (V)

06

4

2

10−4

10−5

10−2

10−3

10−1

ID

(A)

10−6

min

typ

max

I

D =1 mA; VDS = VGS

T

j =25 °C; VDS = VGS

003aaa730

6

10

14

18

5

101520

VGS (V)

RDSon

(m

Ω)

03ne89

0

0.5

1

1.5

2

-60

0

60

120

180

Tj (

°C)

a

T

j =25 °C; ID =25 A

a =

R

DSon

R

DSon(25°C)

Número de pieza similar - BUK7610-55AL

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NXP Semiconductors	BUK7610-55AL	203Kb / 13P	N-channel TrenchMOS standard level FET Rev. 02-9 January 2008

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BUK7610-55AL Datasheet(PDF) 8 Page - NXP Semiconductors

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