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74LVTH32245 Datasheet(PDF) 4 Page - NXP Semiconductors

No. de pieza 74LVTH32245
Descripción Electrónicos  3.3 V 32-bit bus transceiver; 3-state
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

74LVTH32245 Datasheet(HTML) 4 Page - NXP Semiconductors

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74LVTH32245_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 23 January 2008
4 of 13
NXP Semiconductors
74LVTH32245
3.3 V 32-bit bus transceiver; 3-state
6.
Functional description
[1]
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state
7.
Limiting values
[1]
Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond indicated under Section 8 “Recommended operating conditions” is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability.
[2]
The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability.
[3]
The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
4B[0:7]
N2, N1, P2, P1, R2, R1, T1, T2
input or output
GND
B3, B4, D3, D4, E3, E4, G3, G4, K3, K4,
M3, M4, N3, N4, R3, R4
ground (0 V)
VCC
C3, C4, F3, F4, L3, L4, P3, P4
supply voltage
Table 2.
Pin description …continued
Symbol
Ball
Description
Table 3.
Function selection[1]
Input
Input/output
nOE
nDIR
nAn
nBn
L
L
nAn = nBn
inputs
L
H
inputs
nBn = nAn
HX
Z
Z
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V)[1][2]
Symbol Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
−0.5
+4.6
V
VI
input voltage
[3]
−0.5
+7.0
V
VO
output voltage
output in OFF or HIGH-state
[3]
−0.5
+7.0
V
IIK
input clamping current
VI < 0 V
−50
-
mA
IOK
output clamping current
VO < 0 V
−50
-
mA
IO
output current
output in LOW-state
-
128
mA
output in HIGH-state
−64
-
mA
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C


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